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1SS319 |
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| Part Number | 1SS319 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS319 Low Voltage High Speed Switching Small package: SC-61 Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (max) ... |
| Features |
n the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage Reverse current Total capacitance
Symbol
VF (1) VF (2) VF (3)
IR CT
Test Condition
IF = 1mA IF = 10mA IF = 100mA VR = 40V VR = 0V , f = 1MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
... |
| Document |
 1SS319 Data Sheet
PDF 603.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS311 |
Toshiba Semiconductor |
Diode |
|
| 2 | 1SS312 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 3 | 1SS313 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 4 | 1SS313 |
Kexin |
VHF TUNER BAND SWITCH APPLICATIONS DIODES |
|
| 5 | 1SS314 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|