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1SS315 |
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| Part Number | 1SS315 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) r... |
| Features |
ltage Forward current Reverse current Total capacitance
Symbol
VF IF IR CT
Test Condition
IF = 2 mA VF = 0.5 V VR = 0.5 V VR = 0.2 V, f = 1 MHz
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
⎯ 0.25 ⎯
V
30
⎯
⎯
mA
⎯
⎯
25
μA
⎯
0.6
⎯
pF
Start of commercial production
1987-05
1
2014-03-01
1SS315
2
2014-03-01
1SS315
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and syst... |
| Document |
 1SS315 Data Sheet
PDF 143.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS311 |
Toshiba Semiconductor |
Diode |
|
| 2 | 1SS312 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 3 | 1SS313 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 4 | 1SS313 |
Kexin |
VHF TUNER BAND SWITCH APPLICATIONS DIODES |
|
| 5 | 1SS314 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|