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1SS311 |
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| Part Number | 1SS311 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 1SS311 High Voltage,High Speed Switching Applications z Low forward voltage : VF = 0.94V (typ.) z High voltage : VR = 400V (min) z Fast revers... |
| Features |
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic Forward voltage
Reverse current Total capacitance
Symbol
VF (1) VF (2) IR (1) IR (2)
CT
Test Circuit
Test Condition
― IF = 10mA
― IF = 100mA ― VR = 300V ― VR = 400V
― VR = 0, f = 1MHz
Reverse recovery... |
| Document |
 1SS311 Data Sheet
PDF 174.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS312 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 2 | 1SS313 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 3 | 1SS313 |
Kexin |
VHF TUNER BAND SWITCH APPLICATIONS DIODES |
|
| 4 | 1SS314 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 5 | 1SS314 |
SEMTECH |
SILICON EPITAXIAL PLANAR DIODE |
|