Switching Diodes Silicon Epitaxial Planar 1SS307E 1. Applications • General-Purpose Rectifiers 2. Features (1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit ESC 1SS307E 1: Cathode 2: Anode ©2018 Toshiba Electronic Devices & Storage .
(1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit ESC 1SS307E 1: Cathode 2: Anode ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2018-11-16 Rev.5.0 1SS307E 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 Peak forward current IFM 300 mA Average rectified current IO 100 Power dissip.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1SS307 |
Toshiba Semiconductor |
Diode | |
2 | 1SS300 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
3 | 1SS300 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES | |
4 | 1SS301 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
5 | 1SS301 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE | |
6 | 1SS301 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES | |
7 | 1SS302 |
Toshiba Semiconductor |
Diode | |
8 | 1SS302 |
Guangdong Kexin Industrial |
ULTRA HIGH SPEED SWITCHING APPLICATIONS | |
9 | 1SS302A |
Toshiba |
Silicon Epitaxial Planar Switching Diodes | |
10 | 1SS306 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
11 | 1SS308 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
12 | 1SS309 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |