1SS309 - Toshiba Semiconductor

1SS309 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 1SS309 Ultra High Speed Switching Applications Unit: mm  Small package : SC-74A  Low forward voltage : VF (3) = 0.90V (typ.)  Fast reverse recovery time : trr = 1.6ns (typ.)  Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit .

Features

ct to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. Note 3: Total rating. (
*): Uni.