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1SS307E |
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| Part Number | 1SS307E |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | Switching Diodes Silicon Epitaxial Planar 1SS307E 1. Applications • General-Purpose Rectifiers 2. Features (1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For ... |
| Features |
(1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales.
3. Packaging and Internal Circuit
ESC
1SS307E
1: Cathode 2: Anode
©2018 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2014-12
2018-11-16 Rev.5.0
1SS307E
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
85
V
Reverse voltage
VR
80
Peak forward current
IFM
300
mA
Average rectified current
IO
100
Power dissip... |
| Document |
 1SS307E Data Sheet
PDF 136.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS307 |
Toshiba Semiconductor |
Diode |
|
| 2 | 1SS300 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 3 | 1SS300 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES |
|
| 4 | 1SS301 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 5 | 1SS301 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE |
|