19NM60N - STMicroelectronics

19NM60N N-Channel MOSFET

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. !-V Order code.

Features

3 2 1 TO-247 Figure 1. Internal schematic diagram $4!" ' 3 Order code VDS (@Tjmax) STW19NM60N 650 V RDS(on) max. ID PTOT 0.285 Ω 13 A 110 W
• Designed for automotive applications and AEC-Q101 qualified
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resi.