19N3LLH6 - STMicroelectronics

19N3LLH6 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL19N3LLH6AG Product summary Order code STL19N3LLH6AG Marking 19N3LLH6 Package PowerFLAT 5x6 Packing Tape and reel DS12507 - Rev 1 - April .

Features

Order code VDS STL19N3LLH6AG 30 V
• AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
• Logic level
• Wettable flank package RDS(on) max. 33 mΩ ID 10 A PTOT 50 W G(4) Applications
• Switching applications S(1, 2, 3) 12 34 Top View NG4D5678S123 Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL19N3LLH6AG Product summary Order code STL19.