19N10 - Unisonic Technologies

19N10 N-CHANNEL POWER MOSFET

Power MOSFET The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage a.

Features

* RDS(ON) = 0.1Ω @VGS = 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( CRSS = typical 32pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 19N10L-T3P-T 19N10G-T3P-T 19N10L-TA3-T 19N10G-TA3-T 19N10L-TM3-T 19N10G-TM3-T 19N10L-TN3-R 19N10G-TN3-R 19N10L-TQ2-R 19N10G-TQ2-R 19N10L-TQ2-T 19N10G-TQ2-T Package TO-3P TO-220 TO-251 TO-252 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packi.