19N20 - INCHANGE

19N20 N-Channel MOSFET

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 60 V ±20 V ID Drain Current-Continuous 19 A IDM Drain Current-Single Pluse 76 A PD Total Dissipation @TC=25℃ 80 W TJ Max. Operating .

Features

·Drain Current
  –ID= 19A@ TC=25℃
·Drain Source Voltage- : VDSS= 60V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.17Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 60 V ±20 V ID Drain Current-Continuous 19 A IDM Drain Current-Single Pluse 76 A PD Total Dissipation @TC=25℃ 80 W TJ Max. .