This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicati.
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Figure 1. Internal schematic diagram
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Order code STL19N65M5
VDS 710 V
RDS(on)max. 0.240 Ω
ID
(1)
12.5 A
1. The value is rated according to Rthj-case and limited by package.
• Worldwide best RDS(on)
* area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
Applications
• Switching applications
Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ hori.
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