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19N65M5 - STMicroelectronics

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19N65M5 N-channel Power MOSFET

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicati.

Features

6  6  6 
*  '  3RZHU)/$7Œ[Ć+9 Figure 1. Internal schematic diagram ' 
*  6  $0Y Order code STL19N65M5 VDS 710 V RDS(on)max. 0.240 Ω ID (1) 12.5 A 1. The value is rated according to Rthj-case and limited by package.
• Worldwide best RDS(on)
* area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance Applications
• Switching applications Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ hori.

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