100N8F6 - STMicroelectronics

100N8F6 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP100N8F6 Table 1: Device summary Marking 100N8F6 Package TO-220 Packing Tube February 2016 DocID026838 Rev 3 This is information on a product in full p.

Features

Order code VDS STP100N8F6 80 V RDS(on)max. 0.009 Ω ID 100 A PTOT 176 W
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss Applications
 Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP100N8F6 Table 1: Device summary Marking 100N8F6 Package TO-220 Packing Tube February 2016 DocID026838 Rev 3 This is information on a product in full production. .