This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore a remarkable manufacturing reproducibility. This new improved device has b.
Type STD100N03L STD100N03L-1
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Package
ID Pw
VDSSS 30 V 30 V
RDS(on)
<0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W
3 1
1 3 2
100%AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) LOGIC LEVEL THRESHOLD
DPAK
IPAK
Description
This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore a remarkable manufacturing reproducibility. This new improved device has been s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 100N03 |
KIA |
N-CHANNEL MOSFET | |
2 | 100N03 |
GFD |
MOSFET | |
3 | 100N02 |
UTC |
N-CHANNEL MOSFET | |
4 | 100N055 |
IXYS Corporation |
Power MOSFET | |
5 | 100N10 |
ETC |
N-Channel PowerTrench MOSFET | |
6 | 100N10 |
ROHM |
Nch 100V 10A Power MOSFET | |
7 | 100N10 |
IXYS |
Power MOSFETs | |
8 | 100N10B |
ON Semiconductor |
Power MOSFET | |
9 | 100N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | 100N10LF7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | 100N3LF3 |
STMicroelectronics |
N-channel MOSFET | |
12 | 100N3LLH6 |
STMicroelectronics |
N-channel Power MOSFET |