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100N8F6 |
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| Part Number | 100N8F6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code... |
| Features |
Order code VDS STP100N8F6 80 V
RDS(on)max. 0.009 Ω
ID 100 A
PTOT 176 W
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP100N8F6 Table 1: Device summary Marking 100N8F6 Package TO-220 Packing Tube February 2016 DocID026838 Rev 3 This is information on a product in full production. ... |
| Document |
 100N8F6 Data Sheet
PDF 603.94KB |
| Distributor | Stock | Price | Buy |
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