100N8F7 - STMicroelectronics

100N8F7 N-channel Power MOSFET

S(1, 2, 3) 12 34 Top View NG4D5678S123 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL100N8F7 Product summary Order code STL100N8F7 M.

Features

PowerFLAT 5x6 Order code V DS RDS(on) max STL100N8F7 80 V 6.1 mΩ
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness ID 100 A PTOT 120 W D(5, 6, 7, 8) 8 76 5 Applications
• Switching applications G(4) Description S(1, 2, 3) 12 34 Top View NG4D5678S123 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switchin.