100N10LF7 - STMicroelectronics

100N10LF7 N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STD100N10LF7AG AM01475v1_Tab Table 1: Device summary Marking Package 100N10LF7 DPAK Packing Tape a.

Features

Order code STD100N10LF7AG VDS 100 V RDS(on) max. 9 mΩ ID 80 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)
 Designed for automotive applications and AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness Applications
 Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more .