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UPD5742T6J |
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| Part Number | UPD5742T6J |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | The μPD5742T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characte... |
| Features |
• Low Noise : NV = −98 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −99 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ • High Gain : GV = +9.0 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ • Low Consumption Current : IDD = 370 μA TYP. @ VDD = 2 V, RL = 2.2 kΩ • Built-in the capacitor for RF noise immunity • High ESD voltage • 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm) APPLICATIONS • Microphone, Sensor, etc. ORDERING INFORMATION Part Number Order Number Package μPD5742T6J-E4 μPD5742T6J-E4-A 3-pin thi... |
| Document |
 UPD5742T6J Data Sheet
PDF 115.22KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | UPD5741T6J |
Renesas |
LOW NOISE AND HIGH GAIN AMPLIFIER |
|
| 2 | UPD5747T6J |
NEC |
LOW NOISE AND HIGH GAIN AMPLIFIER |
|
| 3 | UPD5702TU |
CEL |
Si LD MOS POWER AMPLIFIER |
|
| 4 | UPD5702TU |
NEC |
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT |
|
| 5 | UPD5710TK |
CEL |
SINGLE CONTROL CMOS SPDT SWITCH |
|