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IPD70N04S3-07 |
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| Part Number | IPD70N04S3-07 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100%... |
| Features |
• N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD70N04S3-07 Product Summary V DS R DS(on),max ID 40 V 6.0 mΩ 82 A PG-TO252-3-11 Type IPD70N04S3-07 Package Marking PG-TO252-3-11 QN0407 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=50 A Gate source v... |
| Document |
 IPD70N04S3-07 Data Sheet
PDF 179.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD70N03S4L-04 |
Infineon Technologies |
Power-Transistor |
|
| 2 | IPD70N10S3-12 |
Infineon Technologies |
Power Transistor |
|
| 3 | IPD70N10S3L-12 |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPD70P04P4-09 |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPD70P04P4L-08 |
Infineon Technologies |
Power-Transistor |
|