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IRGS4056DPbF |
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| Part Number | IRGS4056DPbF |
| Manufacturer | International Rectifier |
| Description | PD - 96197 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 µS sho... |
| Features |
• Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package C G E n-channel Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel... |
| Document |
 IRGS4056DPbF Data Sheet
PDF 400.62KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRGS4055PBF |
International Rectifier |
PDP Trench IGBT |
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| 2 | IRGS4045DPBF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 3 | IRGS4062DPBF |
International Rectifier |
Power MOSFET |
|
| 4 | IRGS4064DPBF |
International Rectifier |
Power MOSFET |
|
| 5 | IRGS4065PBF |
International Rectifier |
IGBT |
|