STB8444 |
Part Number | STB8444 |
Manufacturer | SamHop Microelectronics |
Description | STB/P8444 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and re... |
Features |
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package.
ID
80A
R DS(ON) (m Ω) Max
4.8 @ VGS=10V
D
D
G
S
G D S
G
STP SERIES TO-220
STB SERIES TO-263(DD-PAK)
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 40 ±20 TC=25°C 80 264 306 TC=25°C 62 -55 to 150
Units V V A A mJ W °C
Sigle Pulse Avalanche Energy Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERI... |
Document |
STB8444 Data Sheet
PDF 228.75KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STB80B170 |
SEMIWILL |
Thyristor Surge Suppresser | |
2 | STB80L60 |
SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
3 | STB80N20M5 |
ST Microelectronics |
Power MOSFET | |
4 | STB80N4F6AG |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STB80NE03L-06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |