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SSD2030P |
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| Part Number | SSD2030P |
| Manufacturer | South Sea Semiconductor |
| Description | P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 40 @VGS = - 10V -30V -20A 65 @VGS = - 5V 75 @VGS = - 4.5V G S D SSD2030P TO-252 D FEATURES Super high density cell... |
| Features |
Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free.
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
-30 + - 25 -20 -50 -1.7 50 -55 to 150
Unit
V V A A A W
o
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
a
R R
JC J... |
| Document |
 SSD2030P Data Sheet
PDF 176.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSD2030N |
South Sea Semiconductor |
N-Channel MOSFET |
|
| 2 | SSD2007A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET |
|
| 3 | SSD2009A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET |
|
| 4 | SSD2011A |
Fairchild Semiconductor |
Dual P-CHANNEL POWER MOSFET |
|
| 5 | SSD2019A |
Fairchild Semiconductor |
Dual P-Channel Power MOSFET |
|