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ME60N03 |
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| Part Number | ME60N03 |
| Manufacturer | Matsuki |
| Description | ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), [email protected],Ids@20A =13mΩ FEATURES Advanced trench process technology High density cell design for ultra l... |
| Features |
Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current
PIN
CONFIGURATION
(TO-252) Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA=25℃ TA=70℃
Symbol
VDSS VGSS ID IDM PD TJ, Tstg EAS RθJA RθJC
Limit
30 ±20 50 100 50 23 -55 to 150 110 T≦10 sec Steady State 20 15 40
Unit
V V A A W ℃ mJ ℃/W ℃/W
Operating Juncti... |
| Document |
 ME60N03 Data Sheet
PDF 672.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ME60N03-G |
Matsuki |
30V N-Channel Enhancement Mode MOSFET |
|
| 2 | ME60N03A |
Matsuki |
25V N-Channel Enhancement Mode MOSFET |
|
| 3 | ME60N03AS |
Matsuki |
25V N-Channel Enhancement Mode MOSFET |
|
| 4 | ME60N03S |
Matsuki |
N-Channel MOSFET |
|
| 5 | ME60N03S-G |
Matsuki |
N-Channel MOSFET |
|