2SB648A |
Part Number | 2SB648A |
Manufacturer | Hitachi |
Description | 2SB648, 2SB648A Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum... |
Features |
, RBE = ∞ IE = –10 µA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, IC = –10 mA VCE = –5 V, IC = –1 mA IC = –30 mA, IB = –3 mA VCE = –5 V, IC = –10 mA VCE = –10 V, IC = –10 mA VCB = –10 V, IE = 0, f = 1 MHz –180 — –120 — –5 — — — — — — — 140 4.5 –180 — –160 — –5 — 60 30 — — — — — — — — — — 140 4.5 Collector cutoff current ICBO DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) 1 60 30 — — — — Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Note: Cob 1. The 2SB648 and 2SB648A are grouped by hFE1 as follows. B C 100 to 200 10... |
Document |
2SB648A Data Sheet
PDF 47.13KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB648 |
Hitachi |
Silicon PNP Transistor | |
2 | 2SB642 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
3 | 2SB643 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
4 | 2SB644 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
5 | 2SB645 |
INCHANGE |
PNP Transistor |