2SB648 - Hitachi

2SB648 Silicon PNP Transistor

2SB648, 2SB648A Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collec.

Features

, RBE = ∞ IE =
  –10 µA, IC = 0 VCB =
  –160 V, IE = 0 VCE =
  –5 V, IC =
  –10 mA VCE =
  –5 V, IC =
  –1 mA IC =
  –30 mA, IB =
  –3 mA VCE =
  –5 V, IC =
  –10 mA VCE =
  –10 V, IC =
  –10 mA VCB =
  –10 V, IE = 0, f = 1 MHz
  –180 —
  –120 —
  –5 — — — — — — — 140 4.5
  –180 —
  –160 —
  –5 — 60 30 — — — — — — — — — — 140 4.5 Collector cutoff current ICBO DC current transfer ratio hFE1
* hFE2 Collector to emitter saturation voltage VCE(sat) 1 60 30 — — — — Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Note: Cob 1. The 2SB648 and 2SB648A are grouped by hFE1 as follows. B C 100 to 200 10.