SSM4513M |
Part Number | SSM4513M |
Manufacturer | Silicon Standard |
Description | Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G1 ID D1 D2 G2 S1 ... |
Features |
20 2.0 0.016 -55 to 150 -55 to 150 P-channel -35 ±20 -4.3 -3.4 -20
Units V V A A A W W/°C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit °C/W
10/12/2004 Rev.2.01
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SSM4513M/GM
N-ch Electrical Characteristics @ T j=25 C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage
2
o
Test Conditions VGS=0V, ID=250uA
Min. 35 1 -
Typ. 0.03 7 6 2 3 8 ... |
Document |
SSM4513M Data Sheet
PDF 346.52KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSM4513GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | SSM4500GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | SSM4501GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | SSM4501GSD |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | SSM4502GM |
Silicon Standard |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |