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IXFN80N50Q2 |
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| Part Number | IXFN80N50Q2 |
| Manufacturer | IXYS |
| Description | Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFET IXFN 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 =... |
| Features |
•Double metal process for low gate resistance •miniBLOC, with Aluminium nitride isolation •Unclamped Inductive Switching (UIS) rated •Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g •Fast intrinsic Rectifier Applications • DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 0 0 2 . 5 5.0 V V • Switched-mode power supplies • DC choppers and resonant-mode V DSS V GS(th) IGSS IDSS RDS(on) VGS = 0 V, ID... |
| Document |
 IXFN80N50Q2 Data Sheet
PDF 528.82KB |
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