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STPSC806D |
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| Part Number | STPSC806D |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 6... |
| Features |
■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations... |
| Document |
 STPSC806D Data Sheet
PDF 115.08KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
| 1 | STPSC806 |
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