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P9NB50FP |
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| Part Number | P9NB50FP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value STP9NB50 500 500 ±30 8.6 5.4 34.4 125 1 4.5 –65 to 150 150 (1)ISD<9A, di/dt<200A/µ, VDD |
| Document |
 P9NB50FP Data Sheet
PDF 142.01KB |
| Distributor | Stock | Price | Buy |
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