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SSM3K04FE |
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| Part Number | SSM3K04FE |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications • • • • With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gat... |
| Features |
ewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Equivalent Circuit
1
2007-11-01
SSM3K04FE
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance www.DataSheet4U.com Output capacitance Switching time Turn-on time Turn-off time Symbo... |
| Document |
 SSM3K04FE Data Sheet
PDF 608.73KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM3K04FS |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | SSM3K04FU |
Toshiba Semiconductor |
High Speed Switching Applications |
|
| 3 | SSM3K04FV |
Toshiba Semiconductor |
High Speed Switching Applications |
|
| 4 | SSM3K01F |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | SSM3K01T |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|