SSU4N60B |
Part Number | SSU4N60B |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
Features |
• • • • • • 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSR4N60B / SSU4N60B 600 2.8 1.8 11.2 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/... |
Document |
SSU4N60B Data Sheet
PDF 664.43KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSU40N01 |
SeCoS |
N-Channel MOSFET | |
2 | SSU40P06-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
3 | SSU04N65 |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
4 | SSU07N65SL |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
5 | SSU102N08S-C |
SeCoS |
N-Channel MOSFET |