PHP15N06E NXP PowerMOS transistor Datasheet, en stock, prix

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PHP15N06E

NXP
PHP15N06E
PHP15N06E PHP15N06E
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Part Number PHP15N06E
Manufacturer NXP (https://www.nxp.com/)
Description N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converter...
Features age temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 15 11 60 60 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2.5 UNIT K/W K/W August 1996 1 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor PHP15N06E STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-sourc...

Document Datasheet PHP15N06E Data Sheet
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