PHP15N06E |
Part Number | PHP15N06E |
Manufacturer | NXP (https://www.nxp.com/) |
Description | N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converter... |
Features |
age temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 15 11 60 60 175 175 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2.5 UNIT K/W K/W
August 1996
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP15N06E
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-sourc... |
Document |
PHP15N06E Data Sheet
PDF 54.22KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP152NQ03LT |
NXP Semiconductors |
TrenchMOS logic level FET | |
2 | PHP152NQ03LTA |
NXP |
N-channel TrenchMOS logic level FET | |
3 | PHP153NQ08LT |
NXP |
N-channel TrenchMOS logic level FET | |
4 | PHP101NQ03LT |
NXP |
TrenchMOS logic level FET | |
5 | PHP101NQ04T |
NXP Semiconductors |
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