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3SK249 |
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| Part Number | 3SK249 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 3SK249 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer ... |
| Features |
n the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Gate 1 leakage current Gate 2 leakage current
Drain-source voltage
Drain current Gate 1-source cut-off voltage Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance Reverse transfer capacitance Power gain Noise figure
Symbol
Test Condition
Min Typ. Max Unit
IG1SS
VDS = ... |
| Document |
 3SK249 Data Sheet
PDF 676.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3SK240 |
Toshiba Semiconductor |
GaAs N-Channel Dual Gate MES Type FET |
|
| 2 | 3SK241 |
Panasonic |
Field Effect Transistors |
|
| 3 | 3SK248 |
Sanyo Semicon Device |
N-Channel Enhancement Silicon MOSFET |
|
| 4 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
| 5 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|