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IPB029N06N3 |
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| Part Number | IPB029N06N3 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor IPB029N06N3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variati... |
| Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 120 120 480 PD Total Dissipation @TC=25℃ 188 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL C... |
| Document |
 IPB029N06N3 Data Sheet
PDF 254.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB029N06N3 |
Infineon |
Power Transistor |
|
| 2 | IPB029N06N3G |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPB029N06NF2S |
Infineon |
MOSFET |
|
| 4 | IPB029N15NM6 |
Infineon |
MOSFET |
|
| 5 | IPB020N08N5 |
Infineon |
MOSFET |
|