TK39A60W |
Part Number | TK39A60W |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK39A60W,ITK39A60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.065Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to ... |
Features |
·Low drain-source on-resistance: RDS(ON) = 0.065Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=1.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 38.8 IDM Drain Current-Single Pulsed 155 PD Total Dissipation @TC=25℃ 50 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature ... |
Document |
TK39A60W Data Sheet
PDF 248.97KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | TK39A60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | TK3904LLD03 |
WILLAS |
Plastic-Encapsulate Transistors | |
3 | TK3904NND03 |
WILLAS |
Plastic-Encapsulate Transistors | |
4 | TK3906LLD03 |
WILLAS |
Plastic-Encapsulate Transistors | |
5 | TK3906NND03 |
WILLAS |
Plastic-Encapsulate Transistors |