FZ800R12KS4_B2 |
Part Number | FZ800R12KS4_B2 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ800R12KS4_B2 HochleistungsmodulmitAlSiCBodenplatteundschnellemIGBT2fürhochfrequentesSchalten HighPowerModulewi... |
Features |
= 15 V IC = 800 A, VGE = 15 V
Tvj = 25°C Tvj = 125°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 32,0 mA, VCE = VGE, Tvj = 25°C
Gateladung Gatecharge
VGE = -15 V ... +15 V, VCE = 600V
InternerGatewiderstand Internalgateresistor
Tvj = 25°C
Eingangskapazität Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom Gate-emitterleakagecurrent
VCE = 0... |
Document |
FZ800R12KS4_B2 Data Sheet
PDF 413.19KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FZ800R12KS4 |
eupec GmbH |
IGBT-Module | |
2 | FZ800R12KE3 |
Infineon |
IGBT | |
3 | FZ800R16KF4 |
eupec GmbH |
IGBT Modules | |
4 | FZ800R17KF6CB2 |
eupec GmbH |
IGBT-Modules | |
5 | FZ800R33KF2C |
Infineon |
IGBT-Module |