Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-.
1600 A VR = 0V, tp = 10ms, TVj = 125°C I2t 170 kA2s RMS, f = 50 Hz, t = 1 min. VISOL 4 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 800A, VGE = 15V, Tvj = 25°C IC = 800A, VGE = 15V, Tvj = 125°C IC = 60mA, VCE =.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FZ800R12KE3 |
Infineon |
IGBT |
|
| 2 | FZ800R12KS4 |
eupec GmbH |
IGBT-Module |
|
| 3 | FZ800R12KS4_B2 |
Infineon |
IGBT |
|
| 4 | FZ800R16KF4 |
eupec GmbH |
IGBT Modules |
|
| 5 | FZ800R33KF2C |
Infineon |
IGBT-Module |
|
| 6 | FZ800R33KL2C |
eupec |
IGBT-Module |
|
| 7 | FZ800R45KL3_B5 |
Infineon |
IGBT |
|
| 8 | FZ825R33HE4D |
Infineon |
IHM-B module |
|
| 9 | FZ100 |
ETC |
FZ100 |
|
| 10 | FZ1000R33HE3 |
Infineon |
IGBT |
|
| 11 | FZ1000R33HL3 |
Infineon |
IGBT |
|
| 12 | FZ1000R65KE4 |
Infineon |
Highly insulated module |
|