FZ800R16KF4 - eupec GmbH

FZ800R16KF4 IGBT Modules

European PowerSemiconductor and Electronics Company www.DataSheet4U.com Marketing Information FZ 800 R 16 KF4 18 screwing depth max. 8 61,5 M8 31,5 130 114 C C E E C G E M4 28 7 16,5 2,5 18,5 external connection (to be done) C C C G E E E external connection (to be done) VWK Apr. 1997 IGBT-Module Höchstzulässige Werte / Maximum rated values.

Features

3,4 kV min. typ. 3,3 4,4 5,5 130 6 60 0,8 1 1,1 1,3 0,25 0,3 max. 3,7 V 4,8 V 6,5 V - nF - mA - mA 400 nA 400 nA - µs - µs - µs - µs - µs - µs Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sättigungsspannung Gate-Schwellenspannung Eingangskapazität Kollektor-Emitter Reststrom collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) iC=800A, v GE=15V, t vj=25°C iC=800A, v GE=15V, t vj=125°C iC=65mA, v CE=vGE, tvj=25°C fO=1MHz,t vj=25°C,v C.