TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ800R33KF2C IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Tvj = -25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max =.
25°C Gateladung Gatecharge VGE = -15 V ... +15 V, VCE = 1800V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 3300 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 800 A, VCE = 1800 V V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FZ800R33KL2C |
eupec |
IGBT-Module | |
2 | FZ800R12KE3 |
Infineon |
IGBT | |
3 | FZ800R12KS4 |
eupec GmbH |
IGBT-Module | |
4 | FZ800R12KS4_B2 |
Infineon |
IGBT | |
5 | FZ800R16KF4 |
eupec GmbH |
IGBT Modules | |
6 | FZ800R17KF6CB2 |
eupec GmbH |
IGBT-Modules | |
7 | FZ800R45KL3_B5 |
Infineon |
IGBT | |
8 | FZ825R33HE4D |
Infineon |
IHM-B module | |
9 | FZ100 |
ETC |
FZ100 | |
10 | FZ1000R33HE3 |
Infineon |
IGBT | |
11 | FZ1000R33HL3 |
Infineon |
IGBT | |
12 | FZ1000R65KE4 |
Infineon |
Highly insulated module |