Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current TC = 80°C TC = 25 °C tP = 1 ms, TC =.
ische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannunggate threshold voltage Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 800 A, VGE = 15V, Tvj = 25°C IC = 800 A, VGE = 15V, Tvj = 125°C IC = 32 mA, VCE = VGE, Tvj = 25°C VGE(th) VCE sat min. 4,5 typ. 3,00 3,60 5,5 max. 6,5 V V V f = 1MHz,Tvj = 25°C,VCE = 25V, .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FZ800R12KS4_B2 |
Infineon |
IGBT | |
2 | FZ800R12KE3 |
Infineon |
IGBT | |
3 | FZ800R16KF4 |
eupec GmbH |
IGBT Modules | |
4 | FZ800R17KF6CB2 |
eupec GmbH |
IGBT-Modules | |
5 | FZ800R33KF2C |
Infineon |
IGBT-Module | |
6 | FZ800R33KL2C |
eupec |
IGBT-Module | |
7 | FZ800R45KL3_B5 |
Infineon |
IGBT | |
8 | FZ825R33HE4D |
Infineon |
IHM-B module | |
9 | FZ100 |
ETC |
FZ100 | |
10 | FZ1000R33HE3 |
Infineon |
IGBT | |
11 | FZ1000R33HL3 |
Infineon |
IGBT | |
12 | FZ1000R65KE4 |
Infineon |
Highly insulated module |