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EPC2029 |
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| Part Number | EPC2029 |
| Manufacturer | EPC |
| Description | eGaN® FET DATASHEET EPC2029 – Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 3.2 mΩ ID , 48 A D G S EPC2029 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mo... |
| Features |
mm x 2.6 mm
• High Speed DC-DC Conversion • Motor Drive • Industrial Automation • Synchronous Rectification • Class-D Audio Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 0.45 RθJB Thermal Resistance, Junction-to-Board 3.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 45 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. PARAMETER Static Charact... |
| Document |
 EPC2029 Data Sheet
PDF 1.24MB |
| Distributor | Stock | Price | Buy |
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