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TF2310 |
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| Part Number | TF2310 |
| Manufacturer | Tuofeng Semiconductor |
| Description | SOT-23 G S The MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally us... |
| Features |
gy Co., Ltd
TF2310
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th) gfs
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=3A
VGS=4.5V, ID=2A
Gate Threshold Voltage Forward Transconductance
VDS=VGS, ID=250uA VDS=5V, ID=3A
60 - - V - 0.05 - V/℃ - - 90 mΩ - - 120 mΩ 1 - 2V -5-S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=48V, VGS=0V
- - 10 uA
IGSS Gate-Source Leakag... |
| Document |
 TF2310 Data Sheet
PDF 236.33KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TF2312 |
Tuofeng Semiconductor |
MOSFET |
|
| 2 | TF2314 |
Tuofeng Semiconductor |
N-Channel MOSFET |
|
| 3 | TF2315 |
Tuofeng Semiconductor |
MOSFET |
|
| 4 | TF2319 |
Tuofeng Semiconductor |
P-Channel MOSFET |
|
| 5 | TF2300 |
Tuofeng Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor |
|