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STGW25H120F2 |
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| Part Number | STGW25H120F2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduct... |
| Features |
• Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 µs minimum short circuit withstand time at TJ=150 °C • Tight parameters distribution • Safe paralleling • Low thermal resistance Figure 1. Internal schematic diagram C (2) G (1) SC12850 E (3) Applications • Uninterruptible power supply • Welding machines • Photovoltaic inverters • Power factor correction • High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devi... |
| Document |
 STGW25H120F2 Data Sheet
PDF 601.16KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STGW25H120DF2 |
STMicroelectronics |
Trench gate field-stop IGBT |
|
| 2 | STGW25M120DF3 |
STMicroelectronics |
1200V 25A low-loss M series IGBT |
|
| 3 | STGW20H60DF |
STMicroelectronics |
600V 20A high speed trench gate field-stop IGBT |
|
| 4 | STGW20H65FB |
STMicroelectronics |
IGBT |
|
| 5 | STGW20NB60H |
ST Microelectronics |
N-CHANNEL IGBT |
|