| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material |
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Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance 2 V40100G PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100G PIN 1 PIN 3 PIN 2 2 3 1 • Meets MSL level 1, per J-STD-020, LF maxi |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K 1 VB40170C PIN 1 PIN 2 K HEATSINK • Material categorization: For definition |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C m |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance 2 V40100C PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 2 3 1 • Meets MSL level 1, per J-STD-020, LF maxi |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K • |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance 2 VTS40100CT PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 2 3 1 • Meets MSL level 1, per J-STD-020C, LF |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C m |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material |
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