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VB40170C |
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| Part Number | VB40170C |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | VB40170C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.52 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB FEATURES • Trench MOS Schottky technol... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K 1 VB40170C PIN 1 PIN 2 K HEATSINK • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 170 V 200 A 0.68 V 175 °C Case: TO-263AB Moldin... |
| Document |
 VB40170C Data Sheet
PDF 110.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VB40100C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VB40100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VB40100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VB40100G |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VB40100G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|