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VB40100G-E3 |
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| Part Number | VB40100G-E3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TO-220AB TM... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-263AB K TO-262AA K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse batt... |
| Document |
 VB40100G-E3 Data Sheet
PDF 145.59KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VB40100G |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VB40100C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VB40100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VB40100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VB40120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|