No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
|
|
|
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS® • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 3 2 1 • Low thermal resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLIC |
|
|
|
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP |
|
|
|
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
|
|
|
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYP |
|
|
|
Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
|
|
|
Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
|
|
|
Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
|
|
|
Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
|
|
|
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AE |
|
|
|
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AE |
|
|
|
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP |
|
|
|
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO |
|
|
|
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C m |
|
|
|
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS® • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 3 2 1 • Low thermal resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLIC |
|
|
|
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free acc |
|
|
|
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO |
|
|
|
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
|
|
|
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
|
|
|
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vis |
|