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V60170G-M3 |
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| Part Number | V60170G-M3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com V60170G-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AB V60170G 3 2 1 PIN 1 PIN 2 PIN 3... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable... |
| Document |
 V60170G-M3 Data Sheet
PDF 123.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | V60170PW |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | V60100C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | V60100C-M3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | V60100P |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | V60100PW |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|