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V60100C-M3 |
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| Part Number | V60100C-M3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com V60100C-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® TO-220AB V60100C 3 2 1 PIN 1 PIN 2 PIN 3... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 100 V 320 A 0.66 V 150 °C TO-220AB Diode variation Common cathode MECHANICAL DATA Case: TO-220AB... |
| Document |
 V60100C-M3 Data Sheet
PDF 120.19KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | V60100C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | V60100P |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | V60100PW |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | V60120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | V60170G-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|