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V60120C |
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| Part Number | V60120C |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com V60120C, VB60120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A TO-220AB TMBS ® D2PAK (TO-263AB) K 3 2 1 V... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB and... |
| Document |
 V60120C Data Sheet
PDF 150.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | V60100C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | V60100C-M3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | V60100P |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | V60100PW |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | V60170G-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|