| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
VBsemi |
N-Channel MOSFET • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise |
|
|
|
|
VBsemi |
P-Channel MOSFET • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Co |
|
|
|
|
VBsemi |
N-Channel MOSFET • TrenchFET® power MOSFET • 100 % UIS tested TO-252 APPLICATIONS D • Primary side switch www.VBsemi.com G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage |
|
|
|
|
VBsemi |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • High Side Switch for Full Bridge Converter • DC/DC Converter for LCD Display S GDS Top View D |
|
|
|
|
VBsemi |
N-Channel MOSFET • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, u |
|
|
|
|
VBsemi |
N-Channel MOSFET • TrenchFET® Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Ga |
|
|
|
|
VBsemi |
P-Channel MOSFET • TrenchFET® Power MOSFET • Material categorization: APPLICATIONS • Load Switch S www.VBsemi.com G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltag |
|